郭锐 副教授

发布时间:2016-09-02 10:43:00 点击:


郭锐图片1.png

教育及研修背景:

1995-1999,长春光学精密机械学院(现为长春理工大学),无机非金属材料,学士学位;

1999-2002,长春理工大学,材料学,硕士学位;
2002-2005,中国科学院理化技术研究所,物理化学,博士学位;
2006-2008,南昌大学,材料科学与工程,博士后

2016-2017,得克萨斯大学阿灵顿分校,物理系,访问学者

 

主要研究兴趣:
光转换功能材料的探索和研究,包括材料合成、相图研究、结构分析、光谱分析和光学性能研究。

 

主要研究课题:

La2CaB8O16:Eu3+Bi3+红色荧光粉的双格位取代形成机制及其发光性能研究

-白光LED用红色荧光粉La2SrB10O19:Eu3+的研制;

-核壳结合五氧化二锑干粉的工业化生产技术与应用研究

ZnO纳米材料补偿共掺杂机制及其光电器件构筑研究

 

发表论文与专利:

[1] Rui Guo, Songling Tang, Shaobin Zhong, Lan Luo, Baochang Cheng, Yuhua Xiong. Photoluminescence properties of Sr2MgB2O6:Eu3+ red phosphor under near-UV excitation. Solid State Sciences, 2015, 50: 65-68.

[2] Baochang Cheng, Jie Zhao, Xiao, Li Cai, Qiangsheng Rui Guo, Yanhe Xiao, Shuijin Lei. PMMA interlayer-modulated memory effects by space charge polarization in resistive switching based on CuSCN-nanopyramids/ZnO-nanorods p-n heterojunction. Scientific Reports, 2015, DOI: 10.1038/srep17859.

[3] Jie Zhao, Baochang Cheng, Yanhe Xiao, Rui Guo, Shuijin Lei. Ultrahigh performance negative thermal-resistance switching based on individual ZnO:K, Cl micro/nanowires for multibit nonvolatile resistance random access memory dual-written/erased repeatedly by temperature or bias. Journal of Materials Chemistry C, 2015, 3(47): 12220-12229.

[4] Jianping Zheng, Baochang Cheng, Fuzhang Wu, Xiaohui Su, Yanhe Xiao, Rui Guo, Shuijin Lei. Modulation of surface trap induced resistive switching by electrode annealing in individual PbS micro/nanowire-based devices for resistance random access memory. ACS Applied Materials and Interfaces, 2014, 6(23): 20812-20818.

[5] Synthesis and luminescent properties of a new phosphor, La2CaB8O16:RE3+(RE = Eu, Tb). J. Alloys Compd., 2013, 550: 459-462.

[6] A new red emitting phosphor:La2SrB10O19:Eu3+. J. Lumin., 2013,138: 170-173.

[7] Rui Guo, Songling Tang, Baochang Cheng, Dunqiang Tan, Yuhua Xiong. Synthesis and photoluminescence properties of a new green emitting phosphor La2SrB10O19:Tb3+. Optical Materials, 35 (2013) 1609-1611.

[8] 一种白光LED用的硼酸盐基红色荧光粉及其制备方法.专利申请号:201210379167.4.

[9] 一种制备材料芯片的正交组合掩膜方法说明书. 专利号: 201510900519. X.

[10] 一种去除硬质合金件表面涂层的方法.专利公开号: CN102392249A

地址:江西省南昌市红谷滩新区学府大道999
邮编:330031 电话:0791-83969553 电邮:mse@ncu.edu.cn
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