王立 研究员/博导

发布时间:2016-11-21 16:10:00 点击:

王立1.jpg

一、基本信息:

赣江特聘教授,博士生导师。

先后入选江西省“赣鄱英才”创新领军人才(2011),江西省百千万人才(2016),国家百千万人才(2017)。曾主持国家863计划、国家自然科学基金等国家和省级课题10多项,课题专项经费6000多万元。曾获得国家技术发明一等奖一项(排名第三),江西省科学技术奖励三项。发表学术论文80多篇,获得授权专利30多项。曾任国家硅基LED工程技术研究中心副主任、南昌大学材料科学研究所所长、晶能光电(江西)有限公司总工程师、南昌黄绿照明有限公司副总裁等职。主要研究领域为新型半导体光电子材料与器件(LED,太阳电池,探测器及新型电子器件)。

二、近年获得的科学技术奖励:

[1] 硅衬底高光效GaN基蓝色发光二极管, 国家技术发明一等奖,2015

[2] 硅衬底GaN基发光二极管, 江西省技术发明一等奖,2012

[3] ZnO薄膜的MOCVD生长及特性研究, 江西省自然科学三等奖,2012

[4] 在硅衬底上制备铟镓铝氮薄膜及发光器件的方法, 江西省专利奖,2011

三、近五年承担的科研项目:

[1] 国家自然科学基金项目,61564007ZnO模板上高In组分InGaN薄膜的原子层外延生长及其光伏性能研究,2016/012019/1247.6万元,在研,主持。

[2] 江西省5511科技创新人才计划,20165BCB18004,柔性衬底上InN低温生长及薄膜晶体管制备研究,2017/01-2019/12,50万元,在研,主持

[3] 江西省杰出青年人才资助计划,20171BCB230052017/01-2019/12,15万元,在研,主持

[4] 江西省“赣鄱英才555工程”创新领军人才项目,大尺寸Si衬底GaN基LED技术研究,2013/01-2015/12,100万元,已结题,主持。

[5] 国家自然科学基金项目,11364034GaN基蓝光LED内量子效率的温度droop效应研究,2014/012017/1245万元,已结题,参加。

[6] 863计划重大专项课题,2011AA03A101,大尺寸Si衬底GaNLED外延生长、芯片制备及封装技术,2011/012013/125565万,已结题,主持。

四、近五年发表的研究论文:

[1] Jinhui Gong, Shitao Liu, Yuandan He, Xingcan Feng, Xuefeng Xia, Zhijue Quan, Li Wang*, Study on the band alignment of GaN/CH3NH3PbBr3 heterojunction by x-ray photoelectron spectroscopy, Appl. Phys. Lett. 111, 122103, 2017

[2] Shitao Liu, Feifei Wu, Qi Yang, Yuandan He, Jianli Zhang, Zhijue Quan, Haibin Huang, Li Wang*, Influence of carrier escape mechanism on the operating wavelength of InGaN/GaN multiple quantum well solar cells, Optoelctron. Adv. Mat. 11, 555559, 2017

[3] Weidong Song, Rupeng Wang, Xingfu Wang, Dexiao Guo, Hang Chen, Yuntao Zhu, Liu Liu, Yu Zhou, Qian Sun, Li Wang, and Shuti Li*, a-Axis AlN/AlN/AlGaN core-shell heterojunction microwires as normally off high electron mobility transistors, ACS Appl. Mater. Interfaces 9, 41435–41442, 2017

[4] Longlong Shu, Meiqian Wan, Zhiguo Wang, Li Wang, Shuijin Lei, Tong Wang, Wenbin Huang*, Naigen Zhou*, and Yu Wang, Large flexoelectricity in Al2O3-doped Ba(Ti0.85Sn0.15)O3 ceramics, Appl. Phys. Lett. 110, 192903, 2017

[5] Shitao Liu, Zhijue Quan, Li Wang*, Carrier transport via V-shaped pits in InGaN/GaN MQW solar cells, Chinese Phys. B 26, 038104, 2017 

[6] Shitao Liu,  Li Wang*,  Zhijue Quan, Role of n-ZnO layer on the improvement of interfacial properties in ZnO/InGaN p-i-n solar cells, Trans. Tianjin Univ. 2317, 2017

[7] Li Wang*, Feifei Wu, Shitao Liu, Qi Yang, Yong Zhao, Daofu Han, Zhijue Quan, Fengyi Jiang, Reduction of the resistivity of Ag/p-GaN contact by progressive breakdown of the interfacial contamination layer, J. Appl. Phys. 118, 165703, 2015

[8] Zhijue Quan*, Li Wang*, Changda Zheng, Junlin Liu, Fengyi Jiang, Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodesJ. Appl. Phys. 116, 183107, 2014

[9] Li Wang*, Zhiyong Cui, Fusheng Huang, Qin Wu, Wen Liu, Xiaolan Wang, Qinghua Mao, Jianli Zhang, Fengyi Jiang, Influence of miscut angle of Si(111) substrates on the performance of InGaN LEDs, Appl. Phys. Express 7, 012102, 2014  

[10] Li Wang*, Fusheng Huang, Zhiyong Cui, Qin Wu, Wen Liu, Changda Zheng, Qinghua Mao, Chuanbing Xiong, Fengyi Jiang, Crystallographic tilting of AlN/GaN layers on miscut Si (111) substrates, Mater. Lett. 115, 8991, 2014 

[11] Jianli Zhang, Chuanbing Xiong, Junlin Liu, Zhijue Quan, Li Wang, Fengyi Jiang*, High brightness InGaN-based yellow light-emitting diodes with strain modulation layers grown on Si substrate, Appl. Phys. A 114, 1049–1053, 2014

[12] Danyang Chen, Li Wang*, Chuanbing Xiong, Changda Zheng, Chunlan Mo, Fengyi Jiang, Stress distribution in GaN films grown on patterned Si (111) substrates and its effect on LED performance, Chinese Phys. Lett. 30, 098101, 2013

五、联系方式

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邮箱:wl@ncu.edu.cn QQ: 474971

 

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